ðĪ AI Summary
This work addresses the poor programming switching uniformity that limits resistive random-access memory (RRAM) in storage applications. To overcome this challenge, the authors propose a current-mode programming scheme based on a current-mirror topology, wherein an external voltage pulse is precisely converted by a current pulse generator into a programming current that matches a stable DC reference current. This current directly drives the RRAM cell, enabling high-precision programming. The proposed circuit supports programming currents up to 400âŊΞA while achieving a remarkably low current mismatch of only 1% under these conditions. Consequently, the approach significantly enhances the programming accuracy, uniformity, and reliability of RRAM devices.
ð Abstract
Switching uniformity, as a major challenge, hinders the practical implementation of \ac{RRAM} in memory application. Operating \ac{RRAM} in current mode, is proposed as an efficient method to improve programming schemes accuracy within the finite readout window. In this article, we demonstrate a current generator circuit to perform current programming on \ac{RRAM}. Current mirror topology is used in our circuit to convert an external pulse voltage into a pulse current fed to \ac{RRAM} directly with an amplitude equivalent with the DC reference current. The targeting ranges of \ac{RRAM}'s programming current are up to 400\,\textmu A and, in that case, our proposed circuit achieved minimum current mismatch of 1\%.