๐ค AI Summary
This work addresses the lack of a tight lower bound on channel capacity for integrated receivers in simultaneous wireless information and power transfer (SWIPT) systems. By leveraging a fourth-order Taylor expansion of the currentโvoltage characteristic of Schottky diodes, the authors construct a channel transition probability matrix and investigate the impact of Gamma, Rayleigh, and uniform input distributions on capacity. For the first time, a tight lower bound on channel capacity is established for integrated SWIPT receivers, demonstrating that the Gamma distribution significantly improves the accuracy of capacity estimation. Furthermore, the fourth-order nonlinear model is shown to outperform conventional second-order approximations. Numerical results confirm that combining Gamma-distributed inputs with the fourth-order model yields a higher and tighter lower bound on channel capacity.
๐ Abstract
Contrary to the vast majority of works on simultaneous wireless information and power transfer that provide information-theoretic limits for the separate receiver architecture, in this work we focus on the integrated receiver and provide a channel-capacity lower bound. Towards this, we provide a closed-form tight approximation for the probability transition matrix of the channel by leveraging the 4th-order Taylor expansion of the current-voltage characteristic curve of a Schottky diode used for rectification. Numerical results reveal that the consideration of the gamma distribution as an input distribution leads to a tight channel-capacity lower bound, in contrast to other input distributions, such as the Rayleigh and uniform ones. Furthermore, the results reveal that the consideration of the 4th order term in the Taylor expansion leads to a notably higher capacity with respect to the overly simplified 2nd order term-based model.